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DISCRETE SEMICONDUCTORS
DATA SHEET
BF908WR
N-channel dual-gate MOS-FET
Preliminary specification 1995 Apr 25
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
FEATURES PINNING
High forward transfer admittance PIN SYMBOL DESCRIPTION
Short channel transistor with high forward transfer 1 s, b source
admittance to input capacitance ratio
2 d drain
Low noise gain controlled amplifier up to 1 GHz.
3 g2 gate 2
4 g1 gate 1
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
d
communications equipment. 3 4
g2
DESCRIPTION
g1
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
2 1
integrated back-to-back diodes between gates and
source. s,b
Top view MAM198
CAUTION
Marking code: MD.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
Fig.1 Simplified outline (SOT343R) and symbol.
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 40 mA
Ptot total power dissipation 300 mW
Tj operating junction temperature 150 C
yfs forward transfer admittance 36 43 50 mS
Cig1-s input capacitance at gate 1 2.4 3.1 4 pF
Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF
F noise figure f = 800 MHz 1.5 2.5 dB
1995 Apr 25 2
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 40 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation up to Tamb = 45 C; see Fig.2; 300 mW
note 1
Tstg storage temperature 65 +150 C
Tj operating junction temperature +150 C
Note
1. Device mounted on a printed-circuit board.
MLD154
400
handbook, halfpage
Ptot
(mW)
300
200
100
0
0 50 100 150 200
Tamb ( oC)
Fig.2 Power derating curve.
1995 Apr 25 3
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 350 K/W
Rth j-s thermal resistance from junction to soldering point Ts = 87 C; note 2 210 K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 20 V
V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 20 V
V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A 2 V
V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 A 1.5 V
IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA
IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V 50 nA
IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V 50 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfs forward transfer admittance pulsed; Tj = 25 C 36 43 50 mS
Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF
Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF
Cos drain-source capacitance f = 1 MHz 1.2 1.7 2.2 pF
Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF
F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt 0.6 1.2 dB
f = 800 MHz; GS = GSopt; BS = BSopt 1.5 2.5 dB
1995 Apr 25 4
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
MRC281 MRC282
40 30
handbook, halfpage VG2-S = 4 V handbook, halfpage VG1-S = 0.3 V
ID
(mA) ID
3V
(mA)
30 0.2 V
2V
20
1.5 V 0.1 V
1V
20
0V
0.5 V 10
-0.1 V
10
-0.2 V
-0.3 V
0V
0 0
-0.6 -0.4 -0.2 0 0.2 0.4 0.6 0 4 8 12 16
VG1-S (V) VDS (V)
VDS = 8 V. VG2-S = 4 V.
Tj = 25 C. Tj = 25 C.
Fig.3 Transfer characteristics; typical values. Fig.4 Output characteristics; typical values.
MRC280 MRC276
50 60
Yfs 4V
3V Yfs
(mS) 2V
40 (mS)
1.5 V
40
30
1V
20
20
0.5 V
10
VG2-S = 0 V
0 0
0 5 10 15 20 25 40 0 40 80 120 160
I D (mA) T j (o C)
VDS = 8 V.
Tj = 25 C.
Fig.5 Forward transfer admittance as a function Fig.6 Forward transfer admittance as a function
of drain current; typical values. of junction temperature; typical values.
1995 Apr 25 5
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
D B E A X
y HE v M A
e
3 4
Q
A
A1
c
2 1
w M B bp b1 Lp
e1
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 1.15 0.2 0.2 0.1
0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-21
SOT343R
06-03-16
1995 Apr 25 6
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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1995 Apr 25 7
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
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Quick reference data The Quick reference data is an
necessary testing for the customer's applications and
extract of the product data given in the Limiting values and
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Characteristics sections of this document, and as such is
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Limiting values Stress above one or more limiting
product is not suitable for automotive use. It is neither
values (as defined in the Absolute Maximum Ratings
qualified nor tested in accordance with automotive testing
System of IEC 60134) will cause permanent damage to
or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
no liability for inclusion and/or use of non-automotive
(proper) operation of the device at these or any other
qualified products in automotive equipment or
conditions above those given in the Recommended
applications.
operating conditions section (if present) or the
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Constant or repeated exposure to limiting values will and use in automotive applications to automotive
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1995 Apr 25 8
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