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SEMICONDUCTOR KTB1423
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
A C
APPLICATIONS.
DIM MILLIMETERS
F
S
A _
10.0 + 0.3
P
_
FEATURES E B
C
15.0 + 0.3
_
2.70 + 0.3
B
High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
High Collector Breakdown Voltage : VCEO=-120V (Min.) F _
3.0 + 0.3
G _
12.0 + 0.3
Complementary to KTD1413. H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
P _
6.8 + 0.1
MAXIMUM RATING (Ta=25 ) _
Q 4.5 + 0.2
R _
2.6 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT N N H S 0.5 Typ
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
1. BASE
Q
1 2 3
Emitter-Base Voltage VEB0 -5 V 2. COLLECTOR
3. EMITTER
DC IC -5
Collector Current A
Pules ICP -8
TO-220IS
Base Current IB -0.12 A
Collector Power Dissipation
PC 30 W
(Tc=25 )
Junction Temperature Tj 150
EQUIVALENT CIRCUIT
Storage Temperature Range Tstg -55 150
C
B
R1 R2
= 8k = 120
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -1 mA
Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -2 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V
hFE(1) VCE=-3V, IC=-0.5A 1000 - -
DC Current Gain
hFE(2) VCE=-3V, IC=-3A 1000 - -
VCE(sat) 1 IC=-3A, IB=-12mA - - -2
Collector-Emitter Saturation Voltage V
VCE(sat) 2 IC=-5A, IB=-20mA - - -4
Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -2.5 V
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 300 pF
2007. 5. 21 Revision No : 2 1/2
KTB1423
h FE - I C V CE(sat) , V BE(sat), - I C
10k -3.5
VCE =-3V
5k I C /I B =250
SATURATION VOLTAGE
DC CURRENT GAIN h FE
-3.0
VCE(sat) , V BE(sat) (V)
3k
-2.5
1k -2.0
500 -1.5 VBE(sat)
300
-1.0 VCE(sat)
100 -0.5
-0.1 -0.3 -1 -3 -10 -0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
C ob , C ib - V CB , V EB -20
I C MAX.(PULSED) *
1k -10
f=1MHz 100