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SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET



Low on-resistance D BV DSS 18V
Capable of 2.5V gate drive RDS(ON) 25m
Low drive current
G
ID 35A
Simple drive requirement
S

Description

Power MOSFETs from Silicon Standard provide the G
D
S TO-252(H)
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.



G
D
S TO-251(J)


Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 18 V
VGS Gate-Source Voltage