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STD3N30
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STD3N30 300 V < 1.4 3A

s TYPICAL RDS(on) = 1.1
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
APPLICATION ORIENTED
3
s
2 3
CHARACTERIZATION 1
s THROUGH-HOLE IPAK (TO-251) POWER
1
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK
POWER PACKAGE IN TAPE & REEL TO-251 TO-252
(SUFFIX "T4") (Suffix "-1") (Suffix "T4")

APPLICATIONS
s HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS



ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VD S Drain-source Voltage (V GS = 0) 300 V
V DG R Drain- gate Voltage (R GS = 20 k) 300 V
V GS Gate-source Voltage