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SEMICONDUCTOR KTX214U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

B
FEATURES B1

Including two devices in US6.
1 6 DIM MILLIMETERS
(Ultra Super mini type with 6 leads.) A _
2.00 + 0.20




C
_




A1
2 5 A1 1.3 + 0.1




A
With Built-in bias resistors. B _
2.1 + 0.1




C
3 4 D B1 _
1.25 + 0.1
Simplify circuit design.
C 0.65
Reduce a quantity of parts and manufacturing process. D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1




H
EQUIVALENT CIRCUIT T T 0.15+0.1/-0.05


Q1 C Q2 OUT G



1. Q1 (EMITTER)
R1 Q2 2. Q1 (BASE)
B IN 3. Q2 OUT (COLLECTOR)
R1=47K 4. Q2 COMMON (EMITTER)
R2=47K 5. Q2 IN (BASE)
R2 6. Q1 (COLLECTOR)


E COMMON

US6

EQUIVALENT CIRCUIT (TOP VIEW) Marking
6 5 4 6 5 4

Lot No.



BI
Q1
Type Name
Q2




1 2 3 1 2 3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
IC 500
Collector Current
ICP * 1
* Single pulse Pw=1mS.

Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Input Voltage VI 40, -10 V
Output Current IO -100

Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.


2008. 9. 23 Revision No : 2 1/4
KTX214U

Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF




Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500
DC Current Gain GI VO=5V, IO=10 20 - -
Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.2V, IO=5 - 2.8 5.0 V
Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 1.0 1.2 - V
Transition Frequency fT * VO=10V, IO=5 - 200 -
Input Current II VI=5V - - 0.18
Note : * Characteristic of Transistor Only.




2008. 9. 23 Revision No : 2 2/4
KTX214U


Q1 (NPN TRANSISTOR)

hFE - IC VCE(sat) - IC




COLLECTOR-EMITTER SATURATION
1K 1K
I C /IB =20
Ta=125 C 500
DC CURRENT GAIN hFE




VOLTAGE VCE(sat) (mV)
500 Ta=25 C 300
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K


COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)



VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION




1K 10K
BASE-EMITTER SATURATION




Ta=25 C I C /IB =20
500
5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)




300
3K
100
50
30 1K Ta=-40 C
I C /IB =50

10 I C /I B =20 500 Ta=25 C 5 C
I C/I B =
10 Ta=12
5 300
3

1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K


COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)




IC - VBE fT - IC
TRANSITION FREQUENCY fT (MHz)




1K 1K
COLLECTOR CURRENT IC (mA)




VCE =2V VCE =2V
500
500 Ta=25 C
300
300
100
50
25 C


5 C

40 C




30 100
Ta=2
Ta=1




Ta=-




10 50
5 30
3

1 10
0 0.5 1.0 1.5 1 3 10 30 100 300 1K


BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)



2008. 9. 23 Revision No : 2 3/4
KTX214U


Q1 (NPN TRANSISTOR)

Cob - VCB , Cib - VEB Pc - Ta




COLLECTOR LPOWER DISSIPATION PC (mW)
COLLECTOR OUTPUT CAPACITANCE Cob (PF)
COLLECTOR INPUT CAPACITANCE Cib (PF)




1K 250
I E =0A
500 f=1MHz
Ta=25 C
300 200


100 150

50
30 100
C ib

10 50
C ob
5
3 0
0 25 50 75 100 125 150

1
0.1 0.3 1 3 10 30 100 AMBIENT TEMPERATURE Ta ( C)

COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)

IO - VI(ON) IO - VI(OFF)
Q2 Q2
100 10k
VO =0.2V VO =5V
OUTPUT CURRENT IO (mA)




OUTPUT CURRENT IO (