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STP80N05-09
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
TYPE VDS S RDS(o n) ID
STP80N05-09 50 V < 0.009 80 A

s ULTRA HIGH DENSITY TECHNOLOGY
s TYPICAL RDS(on) = 7 m
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
o
s 175 C OPERATING TEMPERATURE 3
2
1

APPLICATIONS
s SYNCROUNOUS RECTIFIERS
TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING

s DC-DC & DC-AC CONVERTER ABSOLUTE

MAXIMUM RATINGS

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 50 V
VDGR Drain- gate Vol tage (R GS = 20 k) 50 V
V GS Gate-s ource Voltage