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S8050

NPN General Purpose Transistors
TO-92


1. EMITTER 1
2. BASE 2
3
3. COLLECTOR



ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 40 Vdc
Emitter-Base VOltage VEBO 5.0 Vdc
Collector Current IC 500 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C




ELECTRICAL CHARACTERISTICS

Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 - Vdc

Collector-Base Breakdown Voltage (IC= 100