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SEMICONDUCTOR MPSA44/45
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES B C
High Breakdown Voltage.
Collector Power Dissipation : PC=625mW.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base MPSA44 500 H 0.45
VCBO V H J _
14.00 + 0.50
Voltage MPSA45 400 F F K 0.55 MAX
L 2.30
Collector-Emitter MPSA44 400 M 0.45 MAX
VCEO V N 1.00
C
1 2 3
Voltage MPSA45 350
L
M
1. EMITTER
Emitter-Base Voltage VEBO 6 V 2. BASE
3. COLLECTOR
Collector Current IC 300 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base MPSA44 500
V(BR)CBO IC=100 A, IE=0 - - V
Breakdown Voltage MPSA45 400
Collector-Emitter MPSA44 400
V(BR)CEO IC=1mA, IB=0 - - V
Breakdown Voltage (1) MPSA45 350
Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 400 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
MPSA44 VCB=400V, IE=0 100
Collector Cut off Current ICBO - - nA
MPSA45 VCB=320V, IE=0 100
MPSA44 VCE=400V, IB=0 500
Collector Cut off Current ICES - - nA
MPSA45 VCE=320V, IB=0 500
Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA
VCE=10V, IC=1mA 40 - -
VCE=10V, IC=10mA 50 - 200
DC Current Gain * hFE
VCE=10V, IC=50mA 45 - -
VCE=10V, IC=100mA 40 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1mA - - 0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
1997. 10. 21 Revision No : 2 1/3
MPSA44/45
1999. 11. 30 Revision No : 3 2/3
MPSA44/45
1997. 10. 21 Revision No : 2 3/3