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November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect transistors High density cell design for low RDS(ON).
are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch.
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, Rugged and reliable.
and fast switching performance. They can be used in most
High saturation current capability.
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
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D
G
D
G
S
TO-92 S
2N7000
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings TA = 25