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STS4DPF20L
DUAL P-CHANNEL 20V - 0.07 - 4A SO-8
STripFETTM POWER MOSFET

TYPE VDSS RDS(on) ID

STS4DPF20L 20 V <0.08 4A
s TYPICAL RDS(on) = 0.07
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" SO-8
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage