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WTM1797
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free 1. BASE
2. COLLECTOR
FEATURES 3. EMITTER 1
2
3
* Low saturation voltage
* Excellent DC current gain characteristics
* Complements to 2SC4672
SOT-89
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -6 V
Collector Current -Continuous IC -2 A
Collector Power dissipation PC 500 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50? A, IE=0 -50 - - V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 - - V
Emitter-base breakdown voltage V(BR)EBO IE=-50? A, IC=0 -6 - - V
Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 ?A
Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 ?A
DC current gain hFE VCE=-2V, IC=-500mA 82 - 270
Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA - - -0.35 V
Transition frequency fT VCE=-2V, IC=-0.5A, f=100MHz - 200 - MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 36 - pF
CLASSIFICATION OF hFE
Rank P Q
Range 82-180 120-270
Marking AGP AGQ
WEITRON 1/3 14-Oct-08
http://www.weitron.com.tw
WTM1797
Typical Characteristics
WEITRON 2/3 14-Oct-08
http://www.weitron.com.tw
WTM1797
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H
D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D
K
J 3.940 4.250
K 1.500TYP
L
L 2.900 3.100
WEITRON 3/3 14-Oct-08
http://www.weitron.com.tw