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WTS772
WTS882
PNP/NPN Epitaxial Planar Transistors
TO-92
1. EMITTER 1
2. COLLECTOR 2
3
3. BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol PNP/WTS772 NPN/WTS882 Unit
Collector-Emitter Voltage VCEO -30 30 Vdc
Collector-Base Voltage VCBO -40 40 Vdc
Emitter-Base VOltage VEBO -5.0 5.0 Vdc
Collector Current (DC) IC(DC) -3.0 3.0 Adc
(1)
Collector Current (Pulse) IC (Pulse) -7.0 7.0 Adc
Base Current IB(Pulse) -0.6 0.6 Adc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
Device Marking
WTS772=B772 , WTS882=D882
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0) V(BR)CEO -30/30 - Vdc
Collector-Base Breakdown Voltage (IC= -100/100