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SS8550(PNP)
TO-92 Bipolar Transistors

1.
TO-92
EMITTER

2. BASE

3. COLLECTOR

Features
Power dissipation
PC : 1 W (TA=25)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
Dimensions in inches and (millimeters)
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V

Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A

Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA

hFE(1) VCE=-1V, IC=-100mA 85 400
DC current gain
hFE(2) VCE=-1V, IC=-800mA 40

Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V

Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V

Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA -1 V

Out capacitance Cob VCB=-10V, IE=0mA,f=1MHZ 20 pF

Transition frequency fT VCE=-10V, IC=-50mA,f=-30MHZ 100 MHz

CLASSIFICATION OF hFE(2)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
SS8550(PNP)
TO-92 Bipolar Transistors

Typical Characteristics