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SEMICONDUCTOR KTA1024
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
B D
FEATURES
High Voltage : VCEO=-150V.
Low Output Capacitance : Cob=5.0pF(Max.).
A
High Transition Frequency : fT=120MHz (Typ.). P
DEPTH:0.2
DIM MILLIMETERS
A 7.20 MAX
Complementary to KTC3206. C
B 5.20 MAX
C 0.60 MAX
G
S
Q D 2.50 MAX
K E 1.15 MAX
F 1.27
J
R
G 1.70 MAX
F F H 0.55 MAX
MAXIMUM RATING (Ta=25 ) J _
14.00 + 0.50
K 0.35 MIN
H H H
CHARACTERISTIC SYMBOL RATING UNIT L _
0.75 + 0.10
M E M M 4
Collector-Base Voltage VCBO -150 V N 25
O 1.25
D
1 2 3 L
O
Collector-Emitter Voltage VCEO -150 V H P 1.50
N N Q 0.10 MAX
_
Emitter-Base Voltage VEBO -5 V 1. EMITTER
R 12.50 + 0.50
S 1.00
IC 2. COLLECTOR
Collector Current -50 mA
3. BASE
Emitter Current IE 50 mA
Base Current IB -5 mA TO-92L
Collector Power Dissipation PC 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25