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UMD6N
DIGITAL TRANSISTOR (NPN+ PNP)
SOT-363
FEATURES
DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half. 1
External circuit
MARKING:D6
Absolute maximum ratings(Ta=25)
Parameter Symbol Limits Unit
Collector-base voltage V(BR)CBO 50 V
Collector-emitter voltage V(BR)CEO 50 V
Emitter-base voltage V(BR)EBO 5 V
Collector current IC 100 mA
Collector Power dissipation PC 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symbol Min. Typ Max. Unit Conditions
Collector-base breakdown voltage V(BR)CBO 50 V IC=50A
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA
Emitter-base breakdown voltage V(BR)EBO 5 V IE=50A
Collector cut-off current ICBO 0.5 A VCB=50V
Emitter cut-off current IEBO 0.5 A VEB=4V
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA
DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA
Input resistance R1 3.29 4.7 6.11 K
Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/ 05