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TIP41A/41B/41C
TIP42A/42B/42C
COMPLEMENTARY SILICON POWER
TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP41A, TIP41B and TIP41C are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are TIP42A,
TIP42B and TIP42C. 3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP41A TIP41B TIP41C
PNP TIP42A TIP42B TIP42C
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 6 A
I CM Collector Peak Current 10 A
IB Base Current 3 A
P tot Total Dissipation at T case 25 o C 65 W
T amb 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
October 1995 1/4
TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.92 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off for TIP41A/42A
Current (I B = 0) V CE = 30 V 0.7 mA
for TIP41B/41C/42B/42C
V CB = 60 V 0.7 mA
I CES Collector Cut-off for TIP41A/42A V CE = 60 V 0.4 mA
Current (V BE = 0) for TIP41B/42B V CE = 80 V 0.4 mA
for TIP41C/42C V CE = 100 V 0.4 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for TIP41A/42A 60 V
(I B = 0) for TIP41B/42B 80 V
for TIP41C/42C 100 V
V CE(sat) * Collector-Emitter IC = 6 A I B = 0.6 A 1.5 V
Saturation Voltage
V BE(on) * Base-Emitter Voltage IC = 6 A V CE = 4 V 2 V
h FE * DC Current Gain I C = 0.3 A V CE = 4 V 30
IC = 3 A V CE = 4 V 15 75
hfe Small Signal Current I C = 0.5 A V CE = 10 V
Gain f = 1 KHz 20
I C = 0.5 A V CE = 10 V
f = 1 MHz 3
Pulsed: Pulse duration = 300