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SID20N06-90I
19A, 60V, RDS(ON) 94 m
Elektronische Bauelemente N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-251P
DESCRIPTION
The miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low RDS(on) and
to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
A
Miniature SC-59 surface mount package saves B C
D
board space.
Fast switching speed.
High performance trench technology. GE
K
APPLICATION F
H
DC-DC converters, power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
M J P
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.40 6.80 G 6.00 6.30
B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.40 0.60 K 0.60 0.90
E 6.80 7.20 M 0.70 1.20
F 4.00 P 0.40 0.60
ABSOLUTE MAXIMUM RATINGS (TA = 25