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MPSA44
High-Voltage NPN Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 400 Vdc
Collector-Base Voltage VCBO 400 Vdc
Emitter-Base VOltage VEBO 5.0 Vdc
Collector Current IC 200 mAdc
Total Device Dissipation T A =25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 400 - Vdc
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 400 - Vdc
-
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current (VCE= 400 Vdc, IB =0) ICE0 5.0 uAdc
-
Collector Cutoff Current (VCB= 400 Vdc, IE=0) ICBO - 0.1 uAdc
Emitter Cutoff Current (VEB= 4.0Vd c, IC =0) IEBO - 0.1 uAdc
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MPSA44 WE IT R ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= 1.0 mAdc, VCE=10Vdc) HFE(1) 70 - -
(IC= 10 mAdc, VCE= 10Vdc) HFE(2) 80 300 -
(IC= 100 mAdc, VCE= 10Vdc) HFE(3) 60 . -
Collector-Emitter Saturation Voltage
-
(IC= 10 mAdc, IB= 1.0 mAdc) VCE(sat) 0.2 Vdc
-
(IC= 50 mAdc, IB= 5.0 mAdc) 0.3
Base-Emitter Saturation Voltage
VBE(sat) - 0.75 Vdc
(IC= 10 mAdc, IB= 1.0 mAdc)
Current-Gain-Bandwidth Product
fT - MHz
(IC= 10 mAdc, VCE= 20 Vdc, f=30MHz) 50
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MPSA44
FIG1. FIG2.
FIG3. FIG4.
FIG5. FIG6.
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MPSA44
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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