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S901 2
SOT-23
TRANSISTOR(PNP)
FEATURES
Complementary to S9013 1. BASE
2. EMITTER
Excellent hFE linearity
3. COLLECTOR
MARKING: 2T1
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-1V, IC= -50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
VCE=-6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF
CLASSIFICATION OF hFE
Rank L H J
Range 120-200 200-350 300-400
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
S901 2
2
JinYu www.htsemi.com
semiconductor
Date:201/5