Text preview for : stu9nc80z.pdf part of ST stu9nc80z . Electronic Components Datasheets Active components Transistors ST stu9nc80z.pdf
Back to : stu9nc80z.pdf | Home
STU9NC80Z
STU9NC80ZI
N-CHANNEL 800V - 0.82 - 8.6A Max220/I-Max220
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STU9NC80Z 800 V <0.9 8.6 A
STU9NC80ZI 800 V <0.9 8.6 A
s TYPICAL RDS(on) = 0.82
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES 3
s 100% AVALANCHE TESTED 2
1
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED Max220 I-Max220
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STU9NC80Z STU9NC80ZI
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage