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SEMICONDUCTOR KTX101U
TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR


GENERAL PURPOSE APPLICATION.

FEATURES
B
Including two devices in US6. B1

(Ultra Super mini type with 6 leads)
1 6 DIM MILLIMETERS
Simplify circuit design. A _
2.00 + 0.20




C
_




A1
2 5 A1 1.3 + 0.1




A
Reduce a quantity of parts and manufacturing process. B _
2.1 + 0.1




C
3 4 D B1 _
1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
EQUIVALENT CIRCUIT (TOP VIEW)




H
T T 0.15+0.1/-0.05

6 5 4 MARKING
6 5 4 G


Lot No. 1. Q1 EMITTER
2. Q1 BASE



B4
3. Q2 COLLECTOR
Q1 Q2 Type Name 4. Q2 EMITTER
5. Q2 BASE
6. Q1 COLLECTOR



1 2 3
1 2 3

US6


Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150
Base Current IB 30


Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150
Base Current IB -30


Q1 Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.




2008. 9. 23 Revision No : 5 1/5
KTX101U


Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2.0 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note)hFE Classification : Y(4)120~240, GR(6)200~400




Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4.0 7.0
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10
Note)hFE Classification : Y(4)120~240, GR(6)200~400




2002. 1. 24 Revision No : 5 2/5
KTX101U


Q 1 (NPN TRANSISTOR)

I C - VCE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
6.0 5.0
COLLECTOR CURRENT I C (mA)




Ta=25 C
200 500
3.0




DC CURRENT GAIN h FE
2.0
300
Ta=100 C VCE =6V
160
Ta=25 C
1.0 Ta=-25 C
120 100
0.5 50
80
I B =-0.2mA
30
VCE =1V
40
0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)




VCE(sat) - I C VBE(sat) - I C

1 10
COLLECTOR-EMITTER SATURATION




COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION




I C /I B=10 I C /I B=10
0.5 5
VOLTAGE VCE(sat) (V)




Ta=25 C
VOLTAGE VBE(sat) (V)




0.3 3


C
0.1 10
0 1
=
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C


0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA)




fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)




COMMON EMITTER COMMON
VCE =10V EMITTER
1k
BASE CURRENT I B (