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STP7NK80Z - STP7NK80ZFP
STB7NK80Z - STB7NK80Z-1
N-CHANNEL 800V - 1.5 - 5.2A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESHTMPower MOSFET

TYPE VDSS RDS(on) ID Pw
STP7NK80Z 800 V < 1.8 5.2 A 125 W
STP7NK80ZFP 800 V < 1.8 5.2 A 30 W
STB7NK80Z 800 V < 1.8 5.2 A 125 W
STB7NK80Z-1 800 V < 1.8 5.2 A 125 W
3 3
s TYPICAL RDS(on) = 1.5 1
2
1
2

s EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING 3
1 3
REPEATIBILITY 12
D2PAK I2PAK


DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip- INTERNAL SCHEMATIC DIAGRAM
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.



APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SMPS FOR INDUSTRIAL APPLICATION.

s LIGHTING (PREHEATING)




ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP7NK80Z P7NK80Z TO-220 TUBE
STP7NK80ZFP P7NK80ZFP TO-220FP TUBE

STB7NK80ZT4 B7NK80Z D2PAK TAPE & REEL

TUBE
STB7NK80Z B7NK80Z D2PAK (ONLY UNDER REQUEST)

STB7NK80Z-1 B7NK80Z I2PAK TUBE



October 2003 1/13
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP7NK80Z
STB7NK80Z STP7NK80ZFP
STB7NK80Z-1
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage