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BC635/637/639(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
High current transistors
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage BC635 45 V
BC637 60 V
BC639 100 V
VCEO Collector-Emitter Voltage BC635 45 V
BC637 60 V
BC639 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
IC=10mA, IB=0 BC635 45 V
Collector-emitter breakdown voltage V(BR)CEO BC637 60 V
BC639 80 V
Collector cut-off current ICBO VCB= 30 V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IB=0 0.1 A
hFE(1) VCE=2 V, IC= 5mA 25
hFE(2) VCE=2V, IC=150mA BC635 40 250
DC current gain BC637-10/BC639-10 63 160
BC637-16/BC639-16 100 250
hFE(3) VCE=2V, IC= 500mA 25
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.5 V
Base-emitter voltage VBE VCE=2V, IC=500mA 1 V
Transition frequency fT VCE=5V, IC=10mA,f= 50 MHZ 100 MHz
BC635/637/639(NPN)
TO-92 Bipolar Transistors
Typical Characteristics