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AP83T02GH/J-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Low On-resistance D BVDSS 25V
Simple Drive Requirement RDS(ON) 6m
Fast Switching Characteristic ID 75A
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the G
D S
designer with the best combination of fast switching, TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP83T02GJ) is
G
available for low-profile applications. D
S TO-251(J)
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage +20 V
ID@TC=25 Continuous Drain Current, V GS @ 10V 75 A
ID@TC=100 Continuous Drain Current, V GS @ 10V 53 A
1
IDM Pulsed Drain Current 240 A
PD@TC=25 Total Power Dissipation 60 W
3
PD@TA=25 Total Power Dissipation 2.4 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2.5 /W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W
Data & specifications subject to change without notice 1
201006022
AP83T02GH/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V
2
VGS=10V, ID=40A - - 6 m
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=30A - - 11 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 55 - S
IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=15A - 24 38 nC
Qgs Gate-Source Charge VDS=20V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 16 - nC
2
td(on) Turn-on Delay Time VDS=15V - 10 - ns
tr Rise Time ID=30A - 84 - ns
td(off) Turn-off Delay Time RG=3,VGS=10V - 26 - ns
tf Fall Time RD=0.5 - 18 - ns
Ciss Input Capacitance VGS=0V - 1150 1840 pF
Coss Output Capacitance VDS=25V - 485 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 365 - pF
Rg Gate Resistance f=1.0MHz - 0.9 -
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=30A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 33 - ns
Qrr Reverse Recovery Charge dI/dt=100A/