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2SC1318(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Collector output capacitance :
Cob=11 pF (TYP),20 pF (MAX)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 70 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 750 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =10A,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 70 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 0.1 A
hFE(1) VCE=10V,IC=150mA 85 340
DC current gain
hFE(2) VCE=10V,IC=500mA 40
Collector-emitter saturation voltage VCE(sat) IC=300mA,IB=30mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=300mA,IB=30mA 1.5 V
Transition frequency fT VCE=10V,IC=50mA,f=200MHz 120 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 11 20 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
2SC1318(NPN)
TO-92 Bipolar Transistors
Typical Characteristics