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SEMICONDUCTOR KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE
DC/DC CONVERTER APPLICATIONS.
FEATURES E
K B K
Composite type with a PNP transistor and a Schottky barrier diode
DIM MILLIMETERS
contained in one package facilitating high-density mounting. 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
The KTX512T is formed with two chips, one being equivalent to C _
0.70 + 0.05
G
2 5 _
0.4 + 0.1
the KTA1535T and the other the KDR411S, encapsulated in one packages. D
F
A
E 2.8+0.2/-0.3
Ultrasmall package facilitates miniaturization in end products _
G
3 4 F 1.9 + 0.2
G 0.95
D
(mounting height 0.7 ). H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
EQUIVALENT CIRCUIT (TOP VIEW) K 0.60
C
L
L 0.55
6 5 4 I H
Marking J J
6 5 4
Lot No. 1. Q 1 EMITTER
2. Q 1 BASE
Q1 D1 3. D 1 ANODE
Type Name
DB 4. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
5. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
6. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
1 2 3 1 2 3
TS6
MAXIMUM RATING (Ta=25 )
Transistor Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
DC IC -3 A
Collector Current
Pulse ICP -5 A
Base Current IB 600 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
Diode (SBD) D1
CHARACTERISTIC SYMBOL RATING UNIT
Peak Reverse Voltage VRRM 40 V
DC Reverse Voltage VR 20 V
Average Output Current ID 0.5 A
Peak Forward Surge Current IFSM 3 A
Junction Temperature Tj 125
Storage Temperature Range Tstg -40 125
2002. 1. 24 Revision No : 1 1/5
KTX512T
ELECTRICAL CHARACTERISTICS (Ta=25 )
Transistor Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -20 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-30mA - -130 -165 mV
Base-Emitter Saturation Voltage VBE(sat) IC=-1.5A, IB=-30mA - -0.85 -1.2 V
DC Current Gain hFE VCE=-2V, IC=-500mA 200 - 560
Transition Frequency fT VCE=-2V, IC=-500mA - 160 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 45 - pF
Turn-On Time ton - 30 -
Swiitching tstg
Storage Time - 90 - nS
Time
Fall Time tf - 10 -
Diode (SBD) D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF (1) IF=10mA - - 0.3 V
Forward Voltage
VF (2) IF=500mA - - 0.5 V
Reverse Current IR VR=10V - - 30 A
Total Capacitance CT VR=10V, f=1MHz - 20 - pF
2002. 1. 24 Revision No : 1 2/5
KTX512T
2002. 1. 24 Revision No : 1 3/5
KTX512T
2002. 1. 24 Revision No : 1 4/5
KTX512T
2002. 1. 24 Revision No : 1 5/5