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CED830G/CEU830G
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
500V, 4.5A, RDS(ON) = 1.5 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. D
TO-251 & TO-252 package.
D
G
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS