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SEMICONDUCTOR KTC2025D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A I
C J
FEATURES DIM MILLIMETERS
D
A _
6.60 + 0.2
High breakdown voltage VCEO 120V, high current 1A. B
C
_
6.10 + 0.2
_ 0.2
5.0 +
D _
1.10 + 0.2
Low saturation voltage and good linearity of hFE.
B
E _
2.70 + 0.2
F _
2.30 + 0.1
Complementary to KTA1045D/L H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
MAXIMUM RATING (Ta=25 ) 1. BASE
2. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT 3. EMITTER
Collector-Base Voltage VCBO 120 V
VCEO DPAK
Collector-Emitter Voltage 120 V
Emitter-Base Voltage VEBO 5 V
IC 1 A
C
I
J
Collector Current A
D
ICP 2
DIM MILLIMETERS
B
Collector Power Ta=25 1.0 A _
6.60 + 0.2
_
6.10 + 0.2
PC W
B
_
5.0 + 0.2
Q
C
K
Dissipation Tc=25 8 H P
D _
1.10 + 0.2
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
Junction Temperature Tj 150 G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
Storage Temperature Range Tstg -55 150 F F L
J
K
_
0.5 + 0.1
_
2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=50V, IE=0 - - 1 A
Emitter Cut of Current IEBO VEB=4V, IC=0 - - 1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
hFE(1) Note VCE=5V, IC=50mA 100 - 320
DC Current Gain
hFE(2) VCE=5V, IC=500mA 20 - -
Gain Bandwidth Product fT VCE=10V, IC=50mA - 130 - MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
I B1
Turn-on Time ton I B2 - 100 -
1 1
24
20u sec 100
Switching Time Turn-off Time toff - 500 - nS
1uF 1uF
-2V 12V
Storage Time tstg VCE =12V - 700 -
I C =10I B1 =-10I B2 =500mA
(Note) : hFE(1) Classification Y:100 200, GR:160 320
2003. 3. 27 Revision No : 3 1/2
KTC2025D/L
I C - VCE VCE(sat) - I C
COLLECTOR EMITTER SATURATION
1.6 1.0
Tc=25 C I C /I B =10
COLLECTOR CURRENT I C (A)
1.4 0.5
20
VOLTAGE VCE(sat) (V)
1.2 0.3
15
12
1.0 10
0.8 8 0.1
6
0.6 4 0.05
0.4 0.03
2
0.2
IB =0mA
0 0.01
0 1 2 3 4 5 6 1 3 10 30 100 300 1k 3k
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
VBE - I C
1.4
COLLECTOR CURRENT I C (A)
VCE =5V
1.2
1.0
0.8
0.6 Pc - Ta
0.4 10
COLLECTOR DISSIPATION PC (W)
1 Tc=25 C
0.2 1 2 Ta=25 C
8
0
0 0.2 0.4 0.6 0.8 1.0 1.2
6
BASE-EMITTER VOLTAGE V BE (V)
C ob - VCB 4
200
OUTPUT CAPACITANCE Cob (pF)
f=1MHz 2
100 2
0
50
0 20 40 60 80 100 120 140 160
30
AMBIENT TMMPERATURE Ta ( C)
10
5
0.05 1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCE (V)
SAFE OPERATING AREA
h FE - I C 5
500 3 I C MAX.(PULSED) *
COLLECTOR CURRENT I C (A)
VCE =5V
I C MAX. (CONTINUOUS)
DC CURRENT GAIN hFE
300 1 10
0