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2SB1261-Z(PNP)
TO-251/TO-252-2L Transistor
TO-251

1. BASE

2. COLLECTOR

3. EMITTER

1 2 3
Features
High hFE hFE=100 to 400
Low vCE(sat) vCE(sat) 0.3V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units TO-252-2L
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PD Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100