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STP6NB25
STP6NB25FP
N-CHANNEL 250V - 0.9 - 5A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID
STP6NB25 250 V < 1.1 5A
STP6NB25FP 250 V < 1.1 5A
s TYPICAL RDS(on) = 0.9
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 2
3 3
2
s VERY LOW INTRINSIC CAPACITANCES 1 1
s GATE CHARGE MINIMIZED
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NB25 STP6NB25FP
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage