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2STL1525

Low voltage high performance NPN power transistor
Preliminary data


Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed

Applications
Emergency lighting
TO-92L
LED
Motherboard and hard disk drive
Mobile equipment
Battery charger
Voltage regulation Figure 1. Internal schematic diagram

Description
The device is a NPN transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.




Table 1. Device summary
Order codes Marking Package Packaging

2STL1525 2STL1525 TO-92L Bulk
2STL1525-AP 2STL1525 TO-92L-AP Ammopack




July 2009 Doc ID 16054 Rev 1 1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 6
change without notice.
Electrical ratings 2STL1525


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VCEX Collector-emitter voltage (VBE = -1.5 V) 95 V
VCEO Collector-emitter voltage (IB = 0) 25 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 5 A
ICM Collector peak current (tP < 5 ms) 10 A
IB Base current 1 A
PTOT Total dissipation at Tamb = 25