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PHP/PHU101NQ03LT
N-channel TrenchMOS logic level FET
Rev. 03 -- 17 November 2005 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Logic level threshold s Low gate charge
s Low on-state resistance
1.3 Applications
s Optimized as a control FET in DC-to-DC converters
1.4 Quick reference data
s VDS 30 V s ID 75 A
s RDSon 5.5 m s Ptot 166 W
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
mb mb D
2 drain (D)
3 source (S)
G
mb mounting base;
connected to drain mbb076 S
1 2 3
SOT533 (IPAK)
1 2 3
SOT78 (3-lead TO-220AB)
Philips Semiconductors PHP/PHU101NQ03LT
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PHP101NQ03LT SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; SOT78
3-lead TO-220AB
PHU101NQ03LT IPAK plastic single-ended package; 3 leads (in-line) SOT533
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25