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Philips Semiconductors Product specification

N-channel enhancement mode IRFZ44NS
TrenchMOSTM transistor

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a surface mounting VDS Drain-source voltage 55 V
plastic envelope using 'trench' ID Drain current (DC) 49 A
technology. The device features very Ptot Total power dissipation 110 W
low on-state resistance and has Tj Junction temperature 175