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2SA966
TO-92MOD Transistor (PNP)
1. EMITTER
TO-92MOD
5.800
1 2. COLLECTOR 6.200
2
3
8.400
3. BASE 8.800
0.900
1.100
0.400
0.600
Features 13.800
14.200
Complementary to 2SC2236 and
3 Watts output Applications.
1.500 TYP
2.900
MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.100
0.000 1.600
Symbol Parameter Value Units 0.380
0.400 4.700
VCBO Collector-Base Voltage -30 V 0.500 5.100
VCEO Collector-Emitter Voltage -30 V
1.730
2.030
VEBO Emitter-Base Voltage -5 V 4.000
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -1.5 A
Pc Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -1mA , IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA ,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current ICBO VCB= -30V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC= -500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC= -1.5 A, IB= -0.03A -2 V
Base-emitter voltage VBE IC= -500mA,VCE=-2V -1 V
Transition frequency fT VCE= -2V, IC=-500mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
2SA966
TO-92MOD Transistor (PNP)
Typical Characteristics