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DISCRETE SEMICONDUCTORS




DATA SHEET




BF996S
N-channel dual-gate MOS-FET
Product specification April 1991
NXP Semiconductors Product specification


N-channel dual-gate MOS-FET BF996S

FEATURES DESCRIPTION
Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143
integrated back-to-back diodes between gates microminiature package with interconnected source
and source. and substrate.


APPLICATIONS
RF applications such as: handbook, halfpage d
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