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2SC2999
TO-92S Transistor (NPN)
1. EMITTER
TO-92S
2. COLLECTOR
3. BASE
123
Features
High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 3 V
IC Collector Current -Continuous 30 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125
Tstg Storage Temperature -40-125
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 25 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 3 V
Collector cut-off current ICBO VCB=10V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A
DC current gain hFE VCE=6V, IC=1mA 40 200
Transition frequency fT VCE=6V, IC=4mA 450 750 MHz
Reverse Transfer Capacitance Cre VCB=6V, f=1MHz 0.6 0.9 pF
Base-to-Collector Time Constant rbb'cc VCE=6V, IC=1mA,,f=31.9MHZ 19 ps
Noise figure NF VCE=6V, IC=1mA,,f=100MHZ 2.2 dB
CLASSIFICATION OF hFE
Rank C D E
Range 40-80 60-120 100-200
2SC2999
TO-92S Transistor (NPN)
2SC2999
TO-92S Transistor (NPN)
2SC2999
TO-92S Transistor (NPN)
2SC2999
TO-92S Transistor (NPN)
2SC2999
TO-92S Transistor (NPN)