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November 1997
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
This N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V
transistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are Proprietary SuperSOTTM-6 package design using copper
particularly suited for low voltage applications in notebook lead frame for superior thermal and electrical capabilities.
computers, portable phones, PCMICA cards, and other
High density cell design for extremely low RDS(ON).
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount Exceptional on-resistance and maximum DC current
package. capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
S
D 1 6
D 3
.65 2 5
G
D
pin 1 3 4
SuperSOT
TM
-6 D
Absolute Maximum Ratings T A = 25