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July 1998

N-Channel Logic Level PowerTrenchTM MOSFET

General Description Features

This N-Channel Logic Level MOSFET has been designed 60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V,
specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0120 @ VGS = 4.5 V.
converters using either synchronous or conventional
switching PWM controllers. Critical DC electrical parameters specified at elevated
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on) Rugged internal source-drain diode can eliminate the need
specifications. for an external Zener diode transient suppressor.
The result is a MOSFET that is easy and safer to drive (even High performance trench technology for extremely low
at very high frequencies), and DC/DC power supply designs RDS(ON).
with higher overall efficiency.