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MJE13009
SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The MJE13009 is a multiepitaxial mesa NPN
transistor. It is mounted in Jedec TO-220 plastic
package, intended for use in motor controls,
switching regulators, deflection circuits, etc.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VCEV Collector-Emitter Voltage (VBE = -1.5 V) 700 V
VEBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 12 A
ICM Collector Peak Current (t p 10 ms) 24 A
IB Base Current 6 A
I BM Base Peak Current (t p 10 ms) 12 A
IE Emitter Current 18 A
I EM Emitter Peak Current 36 A
Pt ot Tot al Power Dissipation at T c 25 Co
100 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
September 1997 1/6
MJE13009
THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 1.25 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collecto r Cut-of f VCEV = rated value 1 mA
Current VBE(off ) = 1.5 V
VCEV = rated value
VEB(off ) = 1.5 V
T cas e = 100o C 5 mA
I EBO Emitter Cut-off VEB = 9 V 1 mA
Current (I C = 0)
V CEO(su s) Collecto r-Emitter I C = 10 mA IE = 0 400 V
Sustaining Voltage
V CE(sat ) Collecto r-Emitter IC = 5 A IB = 1A 1 V
Saturation Voltage IC = 8 A IB = 1.6 A 1. 5 V
I C = 12 A IB = 3A 3 V
IC = 8 A IB = 1.6 A
T cas e = 100o C 2 V
VBE( sat) Base-Emitter IC = 5 A IB = 1 A 1. 2 V
Saturation Voltage IC = 8 A IB = 1.6 A 1. 6 V
IC = 8 A IB = 1.6 A
T cas e = 100o C 1. 5 V
hFE DC Current Gain IC = 5 A VCE = 5 V 8 40
IC = 8 A VCE = 5 V 6 30
fT Transistor Frequ ency I C = 500 mA VCE = 10 V 4 MHz
C OB Output Capacita nce VCB = 10 A IE = 0 180 pF
f = 0.1 MHz
RESISTIVE LOAD 1. 1