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Philips Semiconductors Product Specification
PowerMOS transistor BUK456-60H
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 60 A
Automotive and general purpose Ptot Total power dissipation 150 W
switching applications. Tj Junction temperature 175