Text preview for : 2n5401.pdf part of UTC 2n5401 . Electronic Components Datasheets Active components Transistors UTC 2n5401.pdf
Back to : 2n5401.pdf | Home
UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
VCEO=-150V
*Collector Dissipation:
Pc(max)=625mW
1
*High current gain
APPLICATIONS
*Telephone Switching Circuit
*Amplifier TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25