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2SB766
SOT-89 Transistor(PNP)
1. BASE
SOT-89
2. COLLECTOR
1 4.6
B
4.4
1.6
2 1.4
1.8
3. EMITTER 1.4
3
2.6 4.25
Features 2.4 3.75
0.8
Large collector power dissipation PC MIN
0.53
0.44 0.48 0.40
Complementary to 2SD874 0.37
0.13 B 0.35
2x)
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-10A, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC =-2mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A
hFE(1) VCE=-10V, IC=-500mA 85 340
DC current gain
hFE(2) VCE=-5V, IC=-1A 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V
Transition frequency fT VCE=-10V, IC=-50mA, f=200MHz 200 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
Marking AQ AR AS
2SB766
SOT-89 Transistor(PNP)
Typical Characteristics