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STL106D
High voltage fast-switching NPN power transistor
Features
NPN transistor
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps at 110V A.C. mains
Flyback and forward single transistor low power
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uc
TO-92
converters at 110V A.C. mains
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Description
The device is manufactured using multi-epitaxial
Figure 1.
P ro
Internal schematic diagram
Planar technology for high switching speeds and
medium voltage capability. It uses a Cellular
le te
so
Emitter structure with planar edge termination to
enhance switching speeds while maintaining the
Ob
wide RBSOA. The device is designed for use in
lighting applications and low cost switch-mode
-
(s)
power supplies.
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Table 1. let Device summary
O bsOrder code
STL106D
Marking
L106D
Package
TO-92
Packaging
Bulk
March 2008 Rev 1 1/8
www.st.com 8
STL106D
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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2/8
STL106D Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 400 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 1.5 A
ICM Collector peak current (tP < 5 ms) 3 A
IB Base current 0.4 A
IBM Base peak current (tP < 5 ms) 0.8 A
Ptot Total dissipation at Tc = 25