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STP53N08
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP53N08 80 V < 0.024 53 A

s TYPICAL RDS(on) = 0.018
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s 175 oC OPERATING TEMPERATURE 2
1
s APPLICATION ORIENTED
CHARACTERIZATION
TO-220

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 80 V
VDGR Drain- gate Voltage (R GS = 20 k) 80 V
V GS Gate-source Voltage