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MMBT3904W
General Purpose Transistor COLLECTOR
3
NPN Silicon
3
1
BASE 1
2
2
EMITTER
SOT-323(SC-70)
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current-Continuous IC 200 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation TA=25 C PD 150 mW
Thermal Resistance, Junction to Ambient R qJA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBT3904W=AM
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc
Collector-Base Breakdown Voltage (IC=10