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STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET
TYPE V DSS R DS(on) ID
STP3NB60 600 V <3.6 3.3 A
STP3NB60FP 600 V < 3.6 2.2 A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3 3
2 2
DESCRIPTION 1 1
Using the latest high voltage MESH OVERLAYTM
process, SGS-Thomson has designed an TO-220 TO-220FP
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
STP3NB60 STP3NB60FP
V DS Drain-source Voltage (V GS = 0) 600 V
V DGR Drain- gate Voltage (R GS = 20 k) 600 V
V GS Gate-source Voltage