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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177
P-channel silicon field-effect
transistors
Product specification April 1995
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and handbook, halfpage 3
source connections.
d
g
s
PINNING
1 2
1 = drain
Top view MAM386
2 = source
3 = gate
Note
1. Drain and source are
interchangeable.
Marking codes: Fig.1 Simplified outline and symbol, SOT23.
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
QUICK REFERENCE DATA
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current IG max. 50 mA
Total power dissipation
up to Tamb = 25 C Ptot max. 300 mW
PMBFJ174 175 176 177
Drain current
VDS = 15 V; VGS = 0 20 7 2 1,5 mA
IDSS
135 70 35 20 mA
Drain-source ON-resistance
VDS = 0,1 V; VGS = 0 RDS on 85 125 250 300
April 1995 2
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (d.c.) IG max. 50 mA
Total power dissipation
up to Tamb = 25 C(1) Ptot max. 300 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
THERMAL RESISTANCE
From junction to ambient in free air Rth j-a = 430 K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified
PMBFJ174 175 176 177
Gate cut-off current
VGS = 20 V; VDS = 0 IGSS 1 1 1 1 nA
Drain cut-off current
VDS = 15 V; VGS = 10 V IDSX 1 1 1 1 nA
Drain current
20 7 2 1,5 mA
VDS = 15 V; VGS = 0 IDSS
135 70 35 20 mA
Gate-source breakdown voltage
IG = 1 A; VDS = 0 V(BR)GSS 30 30 30 30 V
Gate-source cut-off voltage
5 3 1 0,8 V
ID = 10 nA; VDS = 15 V VGS off
10 6 4 2,25 V
Drain-source ON-resistance
VDS = 0,1 V; VGS = 0 RDS on 85 125 250 300
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
April 1995 3
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise specified
Input capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V Cis typ. 8 pF
VGS = VDS = 0 Cis typ. 30 pF
Feedback capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V Crs typ. 4 pF
Switching times (see Fig.2 3) PMBFJ174 175 176 177
Delay time td typ. 2 5 15 20 ns
Rise time tr typ. 5 10 20 25 ns
Turn-on time ton typ. 7 15 35 45 ns
Storage temperature ts typ. 5 10 15 20 ns
Fall time tf typ. 10 20 20 25 ns
Turn-off time toff typ. 15 30 35 45 ns
Test conditions: VDD 10 6 6 6 V
VGS off 12 8 6 3 V
RL 560 1200 2000 2900
VGS on 0 0 0 0 V
VGSoff
handbook, halfpage -VDD 90%
INPUT
50
10%
Vout
RL 10% 10%
OUTPUT
Vin D.U.T
90% 90%
50 tf tr
ts td MBK293
MBK292
Rise time input voltage 1 ns
Fig.3 Input and output waveforms
td tr = ton
Fig.2 Switching times test circuit ts tf = toff
April 1995 4
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT23
D B E A X
HE v M A
3
Q
A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
04-11-04
SOT23 TO-236AB
06-03-16
April 1995 5
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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April 1995 6
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
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Quick reference data The Quick reference data is an
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Limiting values Stress above one or more limiting
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values (as defined in the Absolute Maximum Ratings
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or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
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operating conditions section (if present) or the
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April 1995 7
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