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3DD13001(NPN)
TO-92 Bipolar Transistors
TO-92
1. BASE 4.45
5.21
2. COLLECTOR
1.25MAX
3. EMITTER 4.32
2.92 5.33
MIN
Features
MIN
6.35 MIN
Seating Plane
12.7
0.48
0.41
power switching applications
3.43
0.53
0.41
MIN
2.41
2.67
MAXIMUM RATINGS (TA=25 unless otherwise noted)
3.18
Symbol Parameter Value Units 4.19 2.03
2.67
VCBO Collector -Base Voltage 600 V 1.14
1.40
2.03
VCEO Collector-Emitter Voltage 400 V 2.67
VEBO Emitter-Base Voltage 7 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 7 V
Collector cut-off current ICBO VCB= 600V , IE=0 100 A
Collector cut-off current ICEO VCE= 400V, IB=0 200 A
Emitter cut-off current IEBO VEB= 7V, IC=0 100 A
hFE(1) VCE= 20V, IC= 20mA 10 40
DC current gain
hFE(2) VCE= 10V, IC= 0.25 mA 5
Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V
VCE= 20V, IC=20mA
Transition frequency fT 8 MHz
f = 1MHz
Fall time tf VCC=45V, IC=50mA 0.3 s
Storage time tS IB1= -IB2=5mA 1.5 s
CLASSIFICATION OF hFE(1)
Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40
3DD13001(NPN)
TO-92 Bipolar Transistors
Typical Characteristics