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PZT2222AT1

NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT- -223
package which is designed for medium power surface mount
applications. http://onsemi.com

Features SOT--223 PACKAGE
PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR
The SOT--223 Package Can be Soldered Using Wave or Reflow SURFACE MOUNT
SOT--223 Package Ensures Level Mounting, Resulting in Improved
COLLECTOR
Thermal Conduction, and Allows Visual Inspection of Soldered 2, 4
Joints
The Formed Leads Absorb Thermal Stress During Soldering, BASE
Eliminating the Possibility of Damage to the Die 1

Available in 12 mm Tape and Reel 3
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS EMITTER
Compliant
4
SOT-
-223 (TO-
-261)
MAXIMUM RATINGS
CASE 318E--04
Rating Symbol Value Unit 1 STYLE 1
2
3
Collector--Emitter Voltage VCEO 40 Vdc
Collector--Base Voltage VCBO 75 Vdc MARKING DIAGRAM
Emitter--Base Voltage VEBO 6.0 Vdc
(Open Collector)

Collector Current IC 600 mAdc AYM
P1FG
Total Power Dissipation PD 1.5 W G
up to TA = 25C (Note 1)

Storage Temperature Range Tstg -- 65 to +150 C
A = Assembly Location
Junction Temperature TJ 150 C Y = Year
Stresses exceeding Maximum Ratings may damage the device. Maximum M = Month Code
Ratings are stress ratings only. Functional operation above the Recommended G = Pb--Free Package
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location)
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2. ORDERING INFORMATION
Device Package Shipping
THERMAL CHARACTERISTICS
PZT2222AT1G SOT--223 1000 Tape & Reel
Rating Symbol Value Unit
(Pb--Free)
Thermal Resistance, RJA 83.3 C/W
Junction--to--Ambient PZT2222AT3G SOT--223 4000 Tape & Reel
(Pb--Free)
Lead Temperature for Soldering, TL 260 C
0.0625 from case 10 Sec For information on tape and reel specifications,
Time in Solder Bath including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.




Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 6
- PZT2222AT1/D
PZT2222AT1

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc
Collector--Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 -- Vdc
Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 -- Vdc
Base--Emitter Cutoff Current (VCE = 60 Vdc, VBE = -- 3.0 Vdc) IBEX -- 20 nAdc
Collector--Emitter Cutoff Current (VCE = 60 Vdc, VBE = -- 3.0 Vdc) ICEX -- 10 nAdc
Emitter--Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 100 nAdc
Collector--Base Cutoff Current ICBO -- 10
(VCB = 60 Vdc, IE = 0) -- 10 nAdc
(VCB = 60 Vdc, IE = 0, TA = 125C) mAdc

ON CHARACTERISTICS
DC Current Gain hFE --
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 --
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 --
(IC = 10 mAdc, VCE = 10 Vdc) 70 --
(IC = 10 mAdc, VCE = 10 Vdc, TA = -- 55C) 35 --
(IC = 150 mAdc, VCE = 10 Vdc) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc) 50 --
(IC = 500 mAdc, VCE = 10 Vdc) 40 --
Collector--Emitter Saturation Voltages VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) -- 0.3
(IC = 500 mAdc, IB = 50 mAdc) -- 1.0
Base--Emitter Saturation Voltages VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) -- 2.0
Input Impedance hie k
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre --
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) -- 8.0x10 --4
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) -- 4.0x10 --4
Small--Signal Current Gain hfe --
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 50 300
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 75 375
Output Admittance hoe mmhos
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 5.0 35
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 25 200
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F -- 4.0 dB

DYNAMIC CHARACTERISTICS
Current--Gain -- Bandwidth Product fT 300 -- MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc -- 8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce -- 25 pF

SWITCHING TIMES (TA = 25C)
Delay Time (VCC = 30 Vdc, IC = 150 mAdc, td -- 10 ns
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Rise Time Figure 1 tr -- 25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts -- 225 ns
IB(on) = IB(off) = 15 mAdc)
Fall Time Figure 2 tf -- 60




http://onsemi.com
2
PZT2222AT1

VCC
Vi

90% R2

Vo
R1
10% Vi D.U.T.
0
tr tp


Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time

Vi = - 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 .
-
PULSE GENERATOR: OSCILLOSCOPE:
PULSE DURATION tp 3 200 ns INPUT IMPEDANCE Zi > 100 k
RISE TIME tr 3 2 ns INPUT CAPACITANCE Ci < 12 pF
DUTY FACTOR = 0.02 RISE TIME tr < 5 ns




Vi VCC

+16.2 V
R2

D.U.T.
R1
0 Vi R3
TIME
Vo
D1 OSCILLOSCOPE

-- 13.8 V R4
tf 100 ms
VBB

Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time




http://onsemi.com
3
PZT2222AT1

PACKAGE DIMENSIONS


SOT-
-223 (TO--261)
CASE 318E--04
D ISSUE N
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1 2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15

2.0
0.079




6.3
2.3 2.3
0.248
0.091 0.091



2.0
0.079


1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.




ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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