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BLF573S
HF / VHF power LDMOS transistor
Rev. 02 -- 17 February 2009 Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 225 50 300 27.2 70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
N Average output power = 300 W
N Power gain = 27.2 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (HF and VHF band)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications
NXP Semiconductors BLF573S
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain
1 1
2 gate
3
3 source [1]
2 2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage -0.5 +11 V
ID drain current - 42 A
Tstg storage temperature -65 +150